Gas detecting device

Measuring and testing – Gas analysis – Detector detail

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Details

338 34, 422 98, G01N 2712

Patent

active

050038125

ABSTRACT:
A gas detecting device includes a substrate, an insulator layer formed on the substrate, a gas sensitive layer formed the insulator layer, a pair of detection leads formed on the insulator layer, the gas sensitive layer partially overlying the pair of detection leads, a signal derived from the gas sensitive layer being sent to an external circuit through the pair of detection leads, a heater member arranged on the insulator layer in the vicinity of the gas sensitive layer, and an insulation coating layer formed on the pair of detection leads and the heater member, and partially overlying the gas sensitive layer so that the gas sensitive layer is put between the insulator layer and the insulation coating layer, and a portion of an upper surface of the gas sensitive layer is exposed to gas.

REFERENCES:
patent: 4224280 (1980-09-01), Takahama et al.
patent: 4358950 (1982-11-01), Chang
patent: 4580439 (1986-04-01), Manaka
patent: 4792433 (1988-12-01), Katsura et al.
T. Oyabu, "Sensing Characteristics of SnO.sub.2 Thin Film Gas Sensor", J. Appl. Phys., 53, 1982, pp. 2785-2787, (p. 65).
H. Ogawa et al., "Electrical Properties of Tin Oxide Ultrafine Particle Films", The Electrochemical Society, vol. 128, No. 9, pp. 2020-2025, 1981.

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