Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-08-30
2005-08-30
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S680000
Reexamination Certificate
active
06936547
ABSTRACT:
The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.
REFERENCES:
patent: 5998303 (1999-12-01), Sato
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6110531 (2000-08-01), Paz de Araujo et al.
patent: 6200911 (2001-03-01), Narwankar et al.
patent: 6268288 (2001-07-01), Hautala et al.
patent: 6511718 (2003-01-01), Paz de Araujo et al.
Dando Ross S.
Hamer Kevin T.
Li Li
Li Weimin
Mardian Allen P.
Luk Olivia
Micron Technology, Inc..
Niebling John F.
Williams Morgan & Amerson P.C.
LandOfFree
Gas delivery system for deposition processes, and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gas delivery system for deposition processes, and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas delivery system for deposition processes, and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3454966