Gas delivering apparatus for chemical vapor deposition

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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118715, C23C 1600

Patent

active

061237760

ABSTRACT:
A gas delivering apparatus useful for improving the level of uniformity of thin film deposited over a silicon wafer in a chemical vapor deposition. By reshaping the injector from a conventional straight hollow tube to a funnel-shaped profile, the opening of the injector is widened. With a wider injector opening, the gas flow rate becomes slower and hence more capable of spreading over a wider wafer surface area. Consequently, a uniform gas flow pattern is established resulting in the deposition of a uniform layer.

REFERENCES:
patent: 5350453 (1994-09-01), Schlosser
patent: 5403399 (1995-04-01), Kurihara et al.
patent: 5772771 (1998-06-01), Li et al.
patent: 5861135 (1999-01-01), Tanabe et al.

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