Gas chemistry cycling to achieve high aspect ratio gapfill...

Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium

Reexamination Certificate

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C118S715000, C118S695000, C118S696000, C118S698000, C438S694000, C438S695000, C438S784000, C438S787000, C438S788000, C427S585000, C427S578000, C427S579000, C427S588000, C204S192230, C204S192100, C204S298010

Reexamination Certificate

active

07052552

ABSTRACT:
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

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