Gas-assisted rapid thermal processing

Details Gas-assisted rapid thermal processing Gas-assisted rapid thermal processing

2005-05-03

2005-05-03

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S530000, C438S798000, C438S799000, C219S390000, C219S405000, C118S050100, C118S725000

Reexamination Certificate

active

06887803

ABSTRACT:
A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

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