Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-03
2000-01-25
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257312, 257532, 257535, 257599, 257600, H01L 27108, H01L 2976, H01L 2900, H01L 2993, H01L 31119
Patent
active
060181753
ABSTRACT:
In a semiconductor device, a capacitor is provided which has a gap in at least one of its plates. The gap is small enough so that fringe capacitance between the sides of this gap and the opposing plate at least compensates, if not overcompensates, for the missing conductive material that would otherwise fill the gap and add to parallel capacitance. As a result, the capacitance of a storage device can be increased without taking up more die area. Alternatively, the size of a capacitor can be reduced with no decrease in capacitance. Various gap configurations and methods for providing them are also within the scope of the current invention.
REFERENCES:
patent: 4931901 (1990-06-01), Heron
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5274591 (1993-12-01), Waller et al.
patent: 5307309 (1994-04-01), Protigal et al.
patent: 5513089 (1996-04-01), Sudo et al.
patent: 5554557 (1996-09-01), Koh
patent: 5557579 (1996-09-01), Raad et al.
patent: 5581206 (1996-12-01), Chevallier et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5661428 (1997-08-01), Li et al.
patent: 5900663 (1999-05-01), Johnson et al.
Halliday, David and Robert Resnick, Fundamentals of Physics. New York: Wiley, 1988 Ch. 27-2, 27-3, 619-621.
Sakurai, T., and K. Tamaru. "Simple Formulas for Two-and Three-Dimensional Capacitances." IEEE Transactions on Electron Devices, vol. ED-30, No. 2, Feb. 1983, 183-185.
Riblet, Henry J. "Improved Approximations for the Fringing and Shielded Slab-Line Capacitances." IEEE Transactions on Microwave Theory and Techniques, vol. MTT-34, No. 11, Nov. 1986, 1125-1130.
Johnstone, G. G. and J. H. B. Deane, "Calculation of Coupling Gap and Fringing Capacitances in Coupled Rectangular Bars Between Ground Planes." Int. J. Electronics, 1995, vol. 78, No. 4, 729-741.
Cloete, J. H. "Coupling Between Two Rectangular Bars Through a Finite Thickness Slot.". Conference Proceedings of the 11.sup.th European Microwave Conference, 1981, 713-718.
Kao David Y.
Peacher James
Brantley Charles
Fenty Jesse G.
Micro)n Technology, Inc.
Saadat Mahshid
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