Gapfill of semiconductor structure using doped silicate glasses

Details Gapfill of semiconductor structure using doped silicate glasses Gapfill of semiconductor structure using doped silicate glasses

1999-09-28

2000-04-11

Powell, William

Compositions

Doping agent source material

65 602, 438760, 438763, C03C 1700, H01L 21302

Patent

active

060484756

ABSTRACT:
Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.

REFERENCES:
patent: 5753948 (1998-05-01), Nguyen et al.
patent: 5770469 (1998-06-01), Uram et al.
patent: 5807792 (1998-09-01), Ilg et al.

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