Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2008-07-17
2011-11-15
Sarkar, Asok (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S421000, C438S424000, C438S614000, C257SE21463, C257SE21681
Reexamination Certificate
active
08058138
ABSTRACT:
Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations.
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Tsukamoto, Keisuke, Advanced Air Gap Process for Multi-Level Cell Flash Memories Reducing Threshold Voltage Interference and Realizing High Reliability, Jpn. J. Appl. Phys., vol. 46, No. 4B, pp. 2184-2187 (2007).
Joshi Sachin
Lim Chan
McGinnis Arthur J.
Brooks Cameron & Huebsch PLLC
Micro)n Technology, Inc.
Sarkar Asok
Slutsker Julia
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