Gap free anchored conductor and dielectric structure and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S713000, C438S720000, C257SE21585

Reexamination Certificate

active

07446036

ABSTRACT:
A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids.

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