Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-18
2008-11-04
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S713000, C438S720000, C257SE21585
Reexamination Certificate
active
07446036
ABSTRACT:
A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids.
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Bolom Tibor
Grunow Stephan
Rath David
Simon Andrew Herbert
Advanced Micro Devices , Inc.
Ghyka Alexander G
International Business Machines - Corporation
Li, Esq. Todd M. C.
Scully , Scott, Murphy & Presser, P.C.
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