Gap filling method using high pressure

Details Gap filling method using high pressure Gap filling method using high pressure

1997-09-19

1999-06-29

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438760, 438761, 438778, 438632, H01L 214763, H01L 2131, H01L 21469

Patent

active

059181524

ABSTRACT:
A method is described for filling narrow gaps in a surface that is being overcoated. This has been achieved by heating the overcoating layer to a sufficient extent so that it flows relatively easily. This, in combination with externally applied pressure, causes the overcoating layer to effectively fill any narrow gaps in the surface being coated. Temperature and pressure are applied for a time that is sufficient to allow small quantities of gas that may have become trapped in the gaps to bubble to the surface. In an alternative embodiment, the surface to be coated is subjected to negative pressure prior to application of the coating. This eliminates the possibility of trapping gas in the gaps so a waiting time is no longer necessary.

REFERENCES:
patent: 5435888 (1995-07-01), Kalnitsky et al.
patent: 5554567 (1996-09-01), Wang
patent: 5567660 (1996-10-01), Chen et al.
patent: 5834339 (1998-11-01), Distefano
patent: 5837618 (1998-11-01), Avanzino

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