Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-06-27
2006-06-27
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S700000, C438S798000
Reexamination Certificate
active
07067440
ABSTRACT:
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
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Bayman Atiye
Gauri Vishal
Papasouliotis George D.
Rahman Md Sazzadur
Schravendijk Bart van
Beyer Weaver & Thomas LLP
Novellus Systems Inc.
Schillinger Laura M.
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