Gang bonding interconnect tape for semiconductive devices and me

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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29577R, 29827, 29846, 148 62, 156630, 156634, 156644, 156656, 156664, 427 141, 427 96, 430311, H05K 100, H05K 306

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active

RE0319678

ABSTRACT:
A gang bonding interconnect tape for use in an automatic bonding machine for gang bonding of semiconductive devices is fabricated by depositing a series of electrically insulative support structures, such as rings of epoxy resin, onto a metallic tape, as of copper, there being at least one of said electrically insulative support structures for individual ones of the interconnect lead patterns to be formed in said metallic tape. The side of the metallic tape, opposite to the support structure, is photoetched with a series of interconnect lead patterns with individual ones of said lead patterns being etched in registration with individual ones of said electrically insulative support structures. The individual electrically insulative support structure, preferably in the form of a ring, is located in each of the lead patterns intermediate the central region thereof and the outer region thereof for supporting the individual leads thereof in circumferentially spaced relation.

REFERENCES:
patent: 3539259 (1970-11-01), Hillman
patent: 3611061 (1971-10-01), Segerson
patent: 3676748 (1972-07-01), Kobayashi
patent: 3689991 (1972-12-01), Aird
patent: 3711625 (1973-01-01), Dupuls
patent: 3724068 (1973-04-01), Galli
patent: 3763404 (1973-10-01), Aird
patent: 3781596 (1973-12-01), Galli et al.
patent: 3904813 (1975-09-01), Groff

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