GaN group compound semiconductor device and method for producing

Details GaN group compound semiconductor device and method for producing GaN group compound semiconductor device and method for producing

1998-04-21

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438602, 438604, 257744, 257745, H01L 2128

Patent

active

061001740

ABSTRACT:
A GaN group compound semiconductor device includes an electrode structure provided on a p-GaN group compound semiconductor layer, the electrode structure including: a first layer formed on the p-GaN group compound semiconductor layer, the first layer including a compound including a first metal element and Ga; and a second layer formed on the first layer, the second layer including the first metal element. The first layer contains substantially no nitrogen.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
K. J. Duxstad et al., "High temperature behavior ot Pt and Pd on GaN" J. Appl. Phys., vol. 81, No. 7 pp. 3134-3137, 1997.
T. Mori et al., "Schottky barriers and contact resistance on p-type GaN" Appl. Phys. Lett., vol. 69, No. 23, pp. 3537-3539, 1996.
S. Nakamura et al., Japanese Laid-Open Publication No. 6-232450, Laid open on Aug. 19, 1994 and English abstracts thereof.
M. Senoo et al., Japanese Laid-Open Publication No. 8-64871, Laid open on Mar. 8, 1996 and English abstracts thereof.
H. S. Venugopalan et al., "Interfacial reactions between nickel thin films and GaN" J. Appl. Phys., vol. 82, No. 2, pp. 650-654, 1997.
M. Yamada et al., Japanese Laid-Open Publication No. 6-275868, Laid open on Sep. 30, 1994 with partial English translation.

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