Gamma radiation sensitive resist materials for semiconductor lit

Details Gamma radiation sensitive resist materials for semiconductor lit Gamma radiation sensitive resist materials for semiconductor lit

1994-12-19

1996-09-10

Grimley, Arthur T.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

355 71, 430906, 430907, G03F 7004

Patent

active

055544843

ABSTRACT:
Fine, sub-micron line features and patterns are created in a radiation sensitive resist layer on a semiconductor wafer by a beam of short wavelength gamma rays. The resist layer includes photoresist which is substantially chemically inactive in response to the gamma rays. The photoresist is either doped or covered with a material that absorbs gamma rays and in response emits secondary radiation of a different wavelength, preferably photons, that is actinic with respect to the photoresist. The resist layer enables using radiation sources having better resolving ability than conventional photolithographic sources to perform near-field and direct-write lithography.

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