Gallum nitride group compound semiconductor laser diode

Details Gallum nitride group compound semiconductor laser diode Gallum nitride group compound semiconductor laser diode

1995-04-19

1996-12-10

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257103, H01S 318, H01L 300

Patent

active

055838790

ABSTRACT:
A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).

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Nakamura, S et al., "Candela-class high-brightness InGaN/AlGaN . . . ", Appl. Phys. Lett. 64(12) Mar. 28, 1994, pp. 168 7-89.
Amano et al, "Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping From Al Ga N/GaN Double Heterostructure", Japanese J. of Applied Physics, 32(1993) 15 Jul., No. 7b, Part 2, pp. L1000-L1002.
Akasaki et al, "Perspective of the UV/Blue Light Emitting Devices Based on GaN and Related Compounds", Optoelectronics Devices & Tech., 7(1992) Jun., No. 1, pp. 49-56.
Nakamura et al, "Thermal Annealing Effects on P-type Mg-doped GaN Films", Japanese J. of Applied Physics, 31(1992)Feb., No.2B, Part 2, pp. L139-L142 .

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