Gallium nitride type semiconductor laser device

Details Gallium nitride type semiconductor laser device Gallium nitride type semiconductor laser device

2006-03-21

2006-03-21

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257SE33023, C372S045010, C372S046010

Reexamination Certificate

active

07015565

ABSTRACT:
A gallium nitride type semiconductor laser device includes: a substrate; and a layered structure formed on the substrate. The layered structure at least includes an active layer of a nitride type semiconductor material which is interposed between a pair of nitride type semiconductor layers each functioning as a cladding layer or a guide layer. A current is injected into a stripe region in the layered structure having a width smaller than a width of the active layer. The width of the stripe region is in a range between about 0.2 μm and about 1.8 μm.

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