Gallium nitride substrate, and gallium-nitride-substrate...

Details Gallium nitride substrate, and gallium-nitride-substrate... Gallium nitride substrate, and gallium-nitride-substrate...

2007-03-15

2009-06-30

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

C257SE27012, C257SE21214, C257SE21237, C438S959000

Reexamination Certificate

active

07554175

ABSTRACT:
Fracture-resistant gallium nitride substrate, and methods of testing for and manufacturing such substrates are made available. A gallium nitride substrate (10) is provided with a front side (12) polished to a mirrorlike finish, a back side (14) on the substrate side that is the opposite of the front side (12). A damaged layer (16) whose thickness d is 30 μm or less is formed on the back side (14). Given that the strength of the front side (12) is I1and the strength of the back side (14) is I2, then the ratio I2/I1is 0.46 or more.

REFERENCES:
patent: 2005/0184299 (2005-08-01), Matsumura et al.
patent: 2007/0051968 (2007-03-01), Yamamoto et al.
patent: H10-242230 (1998-09-01), None
patent: 2004-143000 (2004-05-01), None
patent: 3581145 (2004-07-01), None

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