Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2005-01-06
2008-10-14
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S472000, C257S473000, C257S480000, C257S481000, C257S485000, C257S486000, C257SE27040, C257SE29149, C257SE29338
Reexamination Certificate
active
07436039
ABSTRACT:
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
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Gottfried Mark
Liu Linlin
Murphy Michael
Pabisz Marek K.
Pophristic Milan
Liu Benjamin Tzu-Hung
Lowenstein & Sandler PC
Tran Minh-Loan
Velox Semiconductor Corporation
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