Gallium nitride materials and methods associated with the same

Details Gallium nitride materials and methods associated with the same Gallium nitride materials and methods associated with the same

2008-04-01

2008-04-01

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S192000, C257SE29091

Reexamination Certificate

active

11096505

ABSTRACT:
Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

REFERENCES:
patent: 4768038 (1988-08-01), Shibata
patent: 5192987 (1993-03-01), Khan et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5296395 (1994-03-01), Khan et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5690736 (1997-11-01), Tokunaga
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5741724 (1998-04-01), Ramandi et al.
patent: 5760426 (1998-06-01), Marx et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5815520 (1998-09-01), Furushima
patent: 5838029 (1998-11-01), Shakuda
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5880485 (1999-03-01), Marx et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 5973335 (1999-10-01), Shannon
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6121121 (2000-09-01), Koide
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6261931 (2001-07-01), Keller et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6291319 (2001-09-01), Yu et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6358770 (2002-03-01), Itoh et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6391748 (2002-05-01), Temkin et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6420197 (2002-07-01), Ishida et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6461944 (2002-10-01), Neudeck et al.
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6486502 (2002-11-01), Sheppard et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6498111 (2002-12-01), Kapolnek et al.
patent: 6521514 (2003-02-01), Gehrke et al.
patent: 6524932 (2003-02-01), Zhang et al.
patent: 6548333 (2003-04-01), Smith
patent: 6583034 (2003-06-01), Ramdani et al.
patent: 6583454 (2003-06-01), Sheppard et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6610144 (2003-08-01), Mishra et al.
patent: 6611002 (2003-08-01), Weeks et al.
patent: 6617060 (2003-09-01), Weeks et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6649287 (2003-11-01), Weeks, Jr. et al.
patent: 6656615 (2003-12-01), Dwilinski et al.
patent: 6657232 (2003-12-01), Morkoc
patent: 6765240 (2004-07-01), Tischler et al.
patent: 6765241 (2004-07-01), Ohno et al.
patent: 6777278 (2004-08-01), Smith
patent: 6841409 (2005-01-01), Onishi
patent: 6849882 (2005-02-01), Chavarkar
patent: 2001/0042503 (2001-11-01), Lo et al.
patent: 2002/0020341 (2002-02-01), Marchand et al.
patent: 2002/0074552 (2002-06-01), Weeks et al.
patent: 2002/0117695 (2002-08-01), Borges
patent: 2002/0167019 (2002-11-01), Nakamura et al.
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2004/0104384 (2004-06-01), Moustakas et al.
patent: 2004/0130002 (2004-07-01), Weeks et al.
patent: 2004/0137684 (2004-07-01), Lochtefeld et al.
patent: 2005/0133818 (2005-06-01), Johnson et al.
patent: 2005/0145851 (2005-07-01), Johnson et al.
patent: 2005/0167775 (2005-08-01), Nagy et al.
patent: 2005/0247942 (2005-11-01), Hon et al.
patent: 2005/0285141 (2005-12-01), Piner et al.
patent: 2005/0285155 (2005-12-01), Johnson et al.
patent: 2006/0006500 (2006-01-01), Piner et al.
patent: 2006/0118819 (2006-06-01), Hanson et al.
patent: 1209729 (2002-05-01), None
patent: 1437764 (2004-07-01), None
patent: 1548807 (2005-06-01), None
patent: WO 96/41906 (1996-12-01), None
patent: WO 01/13436 (2001-02-01), None
patent: WO 02/058164 (2002-07-01), None
Amano, H. et al., “Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers,” MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999).
Beaumont, B. et al., “Lateral Overgrowth of GaN on Patterned GaN/Sapphire Substrate Via Selective Metal Organic Vapour Phase Epitaxy: A Route to Produce Self Supported GaN Substrates,” J. Crystal Growth 189/190:97 (1998).
Brown, J.D. et al., “AlGaN/GaN HFETs Fabricated on 100-mm GaN on Silicon (111) Substrates,” Solid-State Electronics 46:1535 (2002).
Brown, J.D. et al., “Performance of AlGaN/GaN HFETs Fabricated on 100mm Silicon Substrates for Wireless Basestation Applications,” Nitronex Corporation, IEEE MTT-S Digest p. 833 (2004).
Bykhovski, A.D. et al., “Elastic Strain Relaxation in GaN-AlN-GaN Semiconductor-Insulator-Semiconductor Structures,” J.Appl. Phys. 78(6):3691 (1995).
Chen, P. et al., “Growth of High Quality GaN Layers With AlN Buffer on Si(111) Substrates,” J. Crystal Growth 225:150 (2001).
Dadgar, A. et al., “Bright, Crack-Free InGaN/GaN Light Emitters on Si(111),” Phys. Stat. Sol. 192(2):308 (2002).
Dadgar, A. et al., “Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 μm in Thickness,” Jpn: J. Appl. Phys. 39:L1183 (2000).
Dadgar, A. et al., “MOVPE Growth of GaN on Si(111) Substrates,” J. Crystal Growth 248:556 (2003).
Davis, R. et al., “Conventional and Pendeo-Epitaxial Growth of GaN(0001) Thin Films on Si(111) Substrates,” J. Crystal Growth 231:335 (2001).
Elhamri, S. et al., “An Electrical Characterization of a Two Dimensional Electron Gas in GaN/AlGaN on Silicon Substrates,” J. Appl. Phys. 95(12):7982 (2004).
Guha, S. et al., “Ultraviolet and Violet GaN Light Emitting Diodes on Silicon,” Appl. Phys. Lett. 72(4):415 (1998).
Haffouz, S. et al., “The Effect of the Si/N Treatment of a Nitridated Sapphire Surface on the Growth Mode of GaN in Low-Pressure Metalorganic Vapor Phase Epitaxy,” Appl. Phys. Lett. 73(9):1278 (1998).
Hageman, P.R. et al., “High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer,” Phys. Stat. Sol. 188(2):523 (2001).
Hanson, A. W. et al., “Development of a GaN Transistor Process for Linear Power Applications,” Nitronex Corporation, Paper presented at the 2004 International Conference on Compound Semiconductor Manufacturing Technology (GaAs MANTECH), Miami, FL.
Hirosawa, K. et al., “Growth of Single Crystal Al2Ga1−αN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 32:L1039 (1993).
Ishikawa, H. et al., “High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer,” Phys. Stat. Sol. 1

Affiliated with

Also associated with

Rating

Gallium nitride materials and methods associated with the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium nitride materials and methods associated with the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride materials and methods associated with the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3934537