Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-11-14
2006-11-14
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000
Reexamination Certificate
active
07135720
ABSTRACT:
Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
REFERENCES:
patent: 4843440 (1989-06-01), Huang
patent: 5192987 (1993-03-01), Khan et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5296395 (1994-03-01), Khan et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5741724 (1998-04-01), Ramandi et al.
patent: 5760426 (1998-06-01), Marx et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5815520 (1998-09-01), Furushima
patent: 5838029 (1998-11-01), Shakuda
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6121121 (2000-09-01), Koide
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6261931 (2001-07-01), Keller et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6291319 (2001-09-01), Yu et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6391748 (2002-05-01), Temkin et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6420197 (2002-07-01), Ishida et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6486502 (2002-11-01), Sheppard et al.
patent: 6498111 (2002-12-01), Kapolnek et al.
patent: 6521514 (2003-02-01), Gehrke et al.
patent: 6524932 (2003-02-01), Zhang et al.
patent: 6548333 (2003-04-01), Smith
patent: 6583034 (2003-06-01), Ramdani et al.
patent: 6583454 (2003-06-01), Sheppard et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6610144 (2003-08-01), Mishra et al.
patent: 6611002 (2003-08-01), Weeks et al.
patent: 6617060 (2003-09-01), Weeks et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6649287 (2003-11-01), Weeks, Jr. et al.
patent: 6765240 (2004-07-01), Tischler et al.
patent: 6765241 (2004-07-01), Ohno et al.
patent: 6777278 (2004-08-01), Smith
patent: 6841409 (2005-01-01), Onishi
patent: 6849882 (2005-02-01), Chavarkar et al.
patent: 2001/0042503 (2001-11-01), Lo et al.
patent: 2002/0020341 (2002-02-01), Marchand et al.
patent: 2002/0117695 (2002-08-01), Borges
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2005/0167775 (2005-08-01), Nagy et al.
patent: WO 96/41906 (1996-12-01), None
patent: WO 99/01931 (1999-01-01), None
patent: WO 01/13436 (2001-02-01), None
patent: WO 02/048434 (2002-06-01), None
patent: WO 03/007338 (2003-01-01), None
patent: WO 03/007383 (2003-01-01), None
Ando, Y. et al., “10-W/mm AlGaN-GaN HFET With a Field Modulating Plate,” IEEE Electron Device Lett. 24(5):289 (2003), May 2003.
Ando, Y. et al., “A 110-W AlGaN/GaN Heterojunction FET On Thinned Sapphire Substrate,” Photonic and Wireless Devices Research Labs, NEC Corp. (2001).
Binari, S.C. et al., “Microwave Performance of GaN MESFETs” Electronics Lett. 30(15):1248 (1994), Jul. 1994.
Bindra, A., “Exotic Materials Squeeze More Juice Out of RF Power Amplifiers,” www.elecdesign.com, ED Online ID #2367, Jun. 24, 2002.
Borges, R. et al., “GaN HFETs on Silicon Target Wireless Infrastructure Market,” Compound Semiconductor, p. 2 (Aug. 2003).
Brown, J.D. et al., “AlGaN/GaN HFETs Fabricated on 100-mm GaN on Silicon (111) Substrates,” Solid-State Electronics 46:1535 (2002).
Brown, J.D. et al., “Performance of AlGaN/GaN HFETs Fabricated on 100mm Silicon Substrates for Wireless Basestation Applications,” Nitronex Corporation, IEEE MTT-S Digest p. 833 (2004).
Chen, P. et al., “Growth of High Quality GaN Layers With AlN Buffer on Si(111) Substrates,” J. Crystal Growth 225:150 (2001).
Chumbes, E. et al., “AlGaN/GaN high Electron Mobility Transistors on Si(III) Substrates,” IEEE Trans. Electron Dev. 48(3):420 (2001), Mar. 2001.
Dadgar, A. et al., “Bright, Crack-Free InGaN/GaN Light Emitters on Si(III),” Phys. Stat. Sol. 192(2):308 (2002).
Dadgar, A. et al., “Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (III) Exceeding 1 μm in Thickness,” Jpn. J. Appl. Phys. 39:L1183 (2000), Nov. 2000.
Dadgar, A. et al., “MOVPE Growth of GaN on Si(III) Substates,” J. Crystal Growth 248:556 (2003).
Elhamri, S. et al., “An Electrical Characterization of a Two Dimensional Electron Gas in GaN/AlGaN on Silicon Substrates,” J. Appl. Phys. 95(12):7982 (2004).
Fanning, D. et al., “Dielectrically Defined Optical T-Gate for High Power GaAs pHEMTs,” GaAsMANTECH Conference (2002).
Guha, S. et al., “Ultraviolet and Violet GaN Light Emitting Diodes on Silicon,” Appl. Phys. Lett. 72(4):415 (1998), Jan. 1998.
Hageman, P.R. et al., “High Quality GaN Layers on Si(III) Substrates: AIN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer,” Phys. Stat. Sol. 188(2):523 (2001).
Hanington, G. et al., “P/He Ion Implant Isolation Technology for AlGaN/GaN HFETs,” Electronics Lett. 34(2):193 (1998), Jan. 1998.
Hanson, A.W. et al., “Development of a GaN Transistor Process for Linear Power Applications,” Nitronex Corporation, Paper presented at the 2004 International Conference on Compound Semiconductor Manufacturing Technology (GaAs MANTECH), Miami, FL.
Hirosawa, K. et al., “Growth of Single Crystal Al2Ga1-αN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 32:L1039 (1993), Aug. 1993.
International Search Report, from corresponding International Application No. PCT/US2004/025433, mailed Mar. 30, 2005.
Ishikawa, H. et al., “High-Quality GaN on Si Substrate Using AlGaN/AIN Intermediate Layer,” Phys. Stat. Sol. 176:599 (1999).
Johnson, J.W. et al., “12 W/mm AlGaN-GaN HFETs on Silicon Substrates,” IEEE Electron Device Lett. 25(7):459 (2004), Jul. 2004.
Johnson, J.W. et al., “Gd2O3/GaN Metal-Oxide-Semiconductor Field-Effect Transistor,” Appl. Phys. Lett. 77(20):3230 (2000), Nov. 2000.
Johnson, J.W. et al., “Material, Process, and Device Development of GaN-Based HFETs on Silicon Substrates,” Nitronex Corporation, Electrochemical Society Proceedings 2004-06, 405 (2004).
Joshin, K. et al., “A 174 W High-Efficiency GaN HEMT Power Amplifier for W-CDMA Base Station Applications,” Fujitsu Laboratories Ltd. (2003).
Kang
Borges Ricardo M.
Brown Jeffrey D.
Chaudhari Apurva D.
Cook, Jr. James W.
Hanson Allen W.
Nitronex Corporation
Prenty Mark V.
Wolf Greenfield & Sacks P.C.
LandOfFree
Gallium nitride material transistors and methods associated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride material transistors and methods associated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride material transistors and methods associated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3625056