Gallium nitride device substrate containing a lattice...

Details Gallium nitride device substrate containing a lattice... Gallium nitride device substrate containing a lattice...

2007-09-25

2007-09-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000

Reexamination Certificate

active

11194237

ABSTRACT:
A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

REFERENCES:
patent: 6133058 (2000-10-01), Kidoguchi et al.
patent: 6744064 (2004-06-01), Lee et al.
patent: 2004/0209402 (2004-10-01), Chai et al.
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures; M.J. Reed et al., Applied Physics Letters vol. 77, No. 25, Dec. 18, 2000, pp. 4121-4123.

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