Gallium nitride baseplate and epitaxial substrate

Details Gallium nitride baseplate and epitaxial substrate Gallium nitride baseplate and epitaxial substrate

2008-12-02

2010-11-30

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S076000, C257SE29089

Reexamination Certificate

active

07843040

ABSTRACT:
A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFefrom a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HClfrom a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeCompof an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GNcontaining elemental nitrogen from a nitrogen source (17), and second substance gas GGacontaining elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).

REFERENCES:
patent: 7170095 (2007-01-01), Vaudo et al.

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