Gallium-nitride-based light-emitting apparatus

Details Gallium-nitride-based light-emitting apparatus Gallium-nitride-based light-emitting apparatus

2006-06-27

2006-06-27

Mai, Anh D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S015000, C257S087000, C257S103000, C438S022000

Reexamination Certificate

active

07067838

ABSTRACT:
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2of the second barrier layers (130), the band gap energy Eg1of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

REFERENCES:
patent: 5544188 (1996-08-01), Takiguchi et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6472683 (2002-10-01), Li
patent: 6738175 (2004-05-01), Morita et al.
patent: 6785311 (2004-08-01), Najda
patent: 6870193 (2005-03-01), Takeya et al.
patent: 6940100 (2005-09-01), Tsujimura et al.
patent: 2004/0125839 (2004-07-01), Lee et al.
patent: 10-126006 (1998-05-01), None
patent: 2000-196194 (2000-07-01), None
patent: 2000-232239 (2000-08-01), None
patent: 2002-314204 (2002-10-01), None
patent: 2003-115642 (2003-04-01), None
patent: 2003-273473 (2003-09-01), None
patent: 2004-87908 (2004-03-01), None
esp@cenet—Document Biblography and Abstract, publication No. JP2002314204, published on Oct. 25, 2002 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP2000232239, published on Aug. 22, 2000 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP2003115642, published on Apr. 18, 2003 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP10126006, published on May. 15, 1998 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP2000196194, published on Jul. 14, 2000 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP2004087908, published on Mar. 18, 2004 (1 page).
esp@cenet—Document Biblography and Abstract, publication No. JP2003273473, published on Sep. 26, 2003 (1 page).

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