Gallium nitride-based compound semiconductor laser and method of

Details Gallium nitride-based compound semiconductor laser and method of Gallium nitride-based compound semiconductor laser and method of

1997-07-25

1999-11-16

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 257 94, 357 30, H01S 319

Patent

active

059870486

ABSTRACT:
A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

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