Gallium arsenide superlattice crystal grown on silicon substrate

Details Gallium arsenide superlattice crystal grown on silicon substrate Gallium arsenide superlattice crystal grown on silicon substrate

1985-09-27

1988-12-06

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 334, 148DIG149, 156612, 156 613, 156DIG81, 427255, 4272552, 428446, C30B 2940

Patent

active

047894210

ABSTRACT:
A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.

REFERENCES:
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4517047 (1985-05-01), Chang et al.
patent: 4561916 (1985-12-01), Akiyama et al.
patent: 4578127 (1986-03-01), Gossard et al.
patent: 4588451 (1986-05-01), Vernon
Fabrication of GaAs MesFet Ring Oscillator on MOCVD Grown GaAs/Si (100) Substrate, Nonaka et al. 11/24/84.

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