Gallium arsenide source follower FET logic family with diodes fo

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Field-effect transistor

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326117, H03K 190956

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active

054518903

ABSTRACT:
The basic building block of the invention is an inverter gate consisting of two stages: The first stage is an input logic switching stage consisting of a depletion mode pull-up FET whose gate is the input node and whose source-to-drain channel is connected in series through a level-shifting Schottky diode with the source-to-drain channel of an depletion mode pull-down FET between drain and source voltage rails. The source of the pull-up FET is connected to the diode's anode while the drain of the pull-down FET is connected to the diode's cathode and is the output node of the input logic switching stage. The level-shifting diode isolates the output node from the input node, which allows the input voltage to switch rail-to-rail without causing problems. The voltage between the source and drain rails is selected so that the Schottky barrier gate of the enhancement mode pull-up transistor is barely forward biased over the threshold voltage of the Schottky barrier gate junction, so that there is very little current through the gate. The second stage is an inverting stage having an enhancement mode pull-up transistor and a depletion mode pull-down transistor whose source-to-drain channels are connected in series across the source and drain voltage rails. The gate of the pull down transistor is connected to the output node of the logic switching stage, while the source-to-drain connection between the two transistors is the output node of the gate.

REFERENCES:
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patent: 4798978 (1989-01-01), Lee et al.
patent: 4812683 (1989-03-01), Fitzpatrick et al.
patent: 4931670 (1990-06-01), Ting
patent: 5027007 (1991-06-01), LaRue et al.
Chen, John V.; CMOS Devices and Technology for VLSI; .COPYRGT.1990 by Prentice-Hall, Inc.; pp. 92-95.

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