Gallium arsenide MESFET memory

Details Gallium arsenide MESFET memory Gallium arsenide MESFET memory

1985-05-23

1987-05-12

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365154, 365190, G11C 702

Patent

active

046655085

ABSTRACT:
The disclosure relates to the chip organization and circuit arrangement of a gallium arsenide MESFET memory for high speed, low power and radiation hard application. The memory is organized into several columns, each column having several memory cells and a sense amplifier. The write and read/sense data buses are placed at the input and output of the sense amplifier to provide better impedance matching to the write and read/sense circuits. The memory circuit as well as the output circuit utilize a combination of d-mode and e-mode gallium arsenide transistors in judicious arrangement to obtain low power requirements and reduced chip size relative to prior art gallium arsenide systems providing the same function and having the same general read access time.

REFERENCES:
patent: 4568957 (1986-02-01), Zuleeg et al.
patent: 4586166 (1986-04-01), Shah

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