Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-12-28
1989-06-20
Doll, John
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566162, 1566163, 1566164, 156624, C30B 1100
Patent
active
048406996
ABSTRACT:
A process that, without doping of PBN crucibles, produces semi-insulating GaAs having low, or essentially no, dislocation density; and in which the crystal may be in situ annealed after growth. The process is a variant of the Heat Exchanger Method (HEM) disclosed in U.S. Pat. No. 3,898,051. Crack-free, semi-insulating GaAs crystals having low dislocation density are grown from presynthesized undoped GaAs meltstock in sealed quartz (vitreous silica) crucibles, without the need for an encapsulant. One aspect of the invention features seeded growth of <100> orientation crystals having a dislocation density 1-2 orders of magnitude less than that of the seed; in another aspect, crystals having fewer than 500 dislocations/cam.sup.2 in their center column are grown without a seed.
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Khattak Chandra P.
Schmid Frederick
White Vernon E.
Wohlgemuth John H.
Doll John
Freeman Lori S.
Ghemini Technologies
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