Galium aluminum arsenide graded index waveguide

Details Galium aluminum arsenide graded index waveguide Galium aluminum arsenide graded index waveguide

1977-06-17

1979-05-01

Corbin, John K.

350 9611, 357 17, 357 19, H01L 2715

Patent

active

041520440

ABSTRACT:
A double heterostructure light emitting device has a graded index optical waveguide formed integrally therein. The integrally formed waveguide collects light from the heterojunction and directs the light in a distinct light pattern on one surface of the device. The rate of variation of the index gradient within the waveguide region determines the geometry of the light pattern. The light output pattern can be conveniently tailored to match the geometry of a wide variety of optical fiber dimensions.

REFERENCES:
patent: 3922062 (1975-11-01), Uchida
patent: 3963468 (1976-06-01), Jaeger et al.
patent: 4015893 (1977-04-01), Sugano et al.
patent: 4021834 (1977-05-01), Epstein et al.
patent: 4054363 (1977-10-01), Suematsu
patent: 4117504 (1978-09-01), Maslov et a.
Reinhart et al., "Monolithically Integrated AlGaAs Double Heterostructure Optical Components," Applied Physics Letters, vol. 25, No. 10, Nov. 15, 1974.

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