Gain memory cell with diode

Static information storage and retrieval – Systems using particular element – Capacitors

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36523005, G11C 1124

Patent

active

057576939

ABSTRACT:
A gain cell in a memory array having read and write bitlines and wordlines, wherein the gain cell comprises a write transistor, a storage node, a read transistor, and a diode is disclosed. The write transistor allows the value of the write bitline to be stored onto the storage node when activated by the write wordline. The read transistor, which allows the stored value to be read, is coupled to the storage node and to the read bitline via the diode. The diode prevents the conduction of the read transistor in the opposite direction, thus preventing read interference from other cells and reducing bitline capacitance.

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patent: 4920513 (1990-04-01), Takeshita
patent: 4989055 (1991-01-01), Redwine
patent: 5359215 (1994-10-01), Konishi
patent: 5463234 (1995-10-01), Toriumi et al.
patent: 5652728 (1997-07-01), Hosotani

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