GaAs single crystal and preparation thereof

Details GaAs single crystal and preparation thereof GaAs single crystal and preparation thereof

1984-11-27

1986-10-21

Sever, Frank

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156617V, 156619, 156DIG72, 156DIG81, B01J 1700, C01B 2700, C04B 3500

Patent

active

046183965

ABSTRACT:
A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform characteristics can be produced, and which may be prepared by a process comprising, at a high temperature and under high pressure, pulling up the single crystal from a raw material melt containing simple substances Ga and As or GaAs compound as well as at least one impurity while controlling the concentration of As so as to keep a distribution coefficient of the impurity in GaAs within 1.+-.0.1.

REFERENCES:
patent: 3630906 (1971-12-01), Willardson et al.

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