GaAs MIS device

Details GaAs MIS device GaAs MIS device

1994-04-05

1996-03-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257289, 257631, H01L 2358, H01L 2976

Patent

active

054970245

ABSTRACT:
A combination of a semiconductor region essentially consisting of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAs.sub.x P.sub.y O.sub.z (w, y, z>0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.

REFERENCES:
patent: 4017881 (1977-04-01), Ono et al.
patent: 4078980 (1978-03-01), Harris et al.
patent: 4165471 (1979-08-01), Ahrenkeil

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