GaAs-GaAlAs semiconductor having a periodic corrugation at an in

Details GaAs-GaAlAs semiconductor having a periodic corrugation at an in GaAs-GaAlAs semiconductor having a periodic corrugation at an in

1975-02-18

1978-02-14

Yudkoff, Norman

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 15, 427 86, 156DIG70, B01J 1704

Patent

active

040736768

ABSTRACT:
A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700.degree. C. to the corrugated surface of the GaAs layer and cooling the solution to a temperature of about 670.degree. C. at a cooling rate of 5.degree. C./min. whereby the periodic corrugation is not transfigured so much.

REFERENCES:
patent: 3565702 (1971-02-01), Nelson
patent: 3741825 (1973-06-01), Lockwood et al.
patent: 3897281 (1975-07-01), Gilbert et al.
patent: 3933538 (1976-01-01), Akai
patent: 3951700 (1976-04-01), Beppu
Laser Oscillation by Nakamura et al., in Applied Physics Letters, vol. 23, No. 5, Sep. 1, 1973, pp. 224, 225.
Optically Pumped GaAs by Nakamura et al., in Applied Physics Letters, vol. 22, No. 10, May 15, 1973, pp. 515, 516.

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