1981-01-29
1984-01-17
Davie, James W.
357 52, H01L 2980
Patent
active
044266561
ABSTRACT:
GaAs FETs exhibit excellent long-term stability if they have a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees C. indicate essentially no device failures after 200 hours of observation and a median failure time of approximately 500 hours.
REFERENCES:
patent: 4196439 (1980-04-01), Niehaus et al.
patent: 4301188 (1981-11-01), Niehaus
DiLorenzo James V.
Hwang James C.
Niehaus William C.
Schlosser Wolfgang O. W.
Wemple Stuart H.
Bell Telephone Laboratories Incorporated
Davie James W.
Schneider Bruce S.
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