GaAs Crystal surface passivation method

Details GaAs Crystal surface passivation method GaAs Crystal surface passivation method

1980-06-16

1981-11-24

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156DIG70, 156DIG73, 427 82, C30B 3300, H01L 21203, H01L 21316

Patent

active

043022782

ABSTRACT:
Reheating the cooled wafer product of the known method of forming thermal oxide surface passivation layers on GaAs crystal wafers, i.e. heating the wafer in contact with thermally vaporized As.sub.2 O.sub.3 in a substantially oxygen free closed vessel at a reaction temperature in excess of 450 degrees, from a temperature lower than the reaction temperature to a temperature higher than the reaction temperature and in the presence of free oxygen increases the compositional, physical and electrical uniformity of the surface layer.

REFERENCES:
patent: 3969164 (1976-07-01), Cho et al.
patent: 4154873 (1979-05-01), Hickox et al.
patent: 4172906 (1979-10-01), Pancholy
J. Electrochem. Soc.: Solid State Science and Technology v. 125, No. 4, 4/74, pp. 579-581.

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