Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-24
1999-05-11
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257289, 257631, 438606, 438779, 438767, 438236, H01L21/316;23/58
Patent
active
059030372
ABSTRACT:
It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO.sub.2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H.sub.2 O.
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Cho Alfred Yi
Hong Minghwei
Lothian James Robert
Mannaerts Joseph Petrus
Ren Fan
Brown Peter Toby
Duong Hung Van
Lucent Technologies - Inc.
Pacher Eugen E.
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