Fusion bonding process and structure for fabricating...

Details Fusion bonding process and structure for fabricating... Fusion bonding process and structure for fabricating...

2005-10-28

2008-10-21

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S542000, C257SE21567

Reexamination Certificate

active

07439159

ABSTRACT:
A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

REFERENCES:
patent: 4498229 (1985-02-01), Wilner
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 5286671 (1994-02-01), Kurtz et al.
patent: 6518147 (2003-02-01), Villa et al.

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