Fusion bonding process and structure for fabricating...

Details Fusion bonding process and structure for fabricating... Fusion bonding process and structure for fabricating...

2011-08-02

2011-08-02

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S536000, C257SE29326, C257S350000, C257S510000, C257S517000, C438S296000, C438S355000, C438S459000

Reexamination Certificate

active

07989894

ABSTRACT:
A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

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patent: 2007/0138584 (2007-06-01), Fortin et al.

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