Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-08
2000-06-27
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438132, 438281, 438215, H01L 2144
Patent
active
060806494
ABSTRACT:
A fusible link in an integrated semiconductor circuit and a process for producing the fusible link contemplate the disposition of a fusible link, which is constructed with a cross-sectional constriction as a desired fusing point for its conductor track, in a void. A surface of the void and/or a bare conductor track can be covered with a protection layer, to prevent corrosion. The advantages of such a fusible link are a lower ignition energy and increased reliability. The fusible link may be used as a memory element of a PROM.
REFERENCES:
patent: 4045310 (1977-08-01), Jones et al.
patent: 4089734 (1978-05-01), Bierig
patent: 4198744 (1980-04-01), Nicolay
patent: 4209894 (1980-07-01), Keen
patent: 4536948 (1985-08-01), Te Velde et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 5903041 (1999-05-01), La Fleur et al.
Muller Karlheinz
Pohle Holger
Werner Wolfgang
Greenberg Laurence A.
Lerner Herbert L.
Murphy John
Niebling John F.
Siemens Aktiengesellschaft
LandOfFree
Fusible link in an integrated semiconductor circuit and process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fusible link in an integrated semiconductor circuit and process , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fusible link in an integrated semiconductor circuit and process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1784128