Fusible link employing capacitor structure

Details Fusible link employing capacitor structure Fusible link employing capacitor structure

1985-03-27

1985-09-24

James, Andrew J.

357 71, 357 59, 357 45, 357 2314, 357 236, H01L 21479, H01L 2354, H01L 2994, H01L 21326

Patent

active

045435944

ABSTRACT:
A capacitor-like MOS structure which provides a fusible link useful in a ROM, redundancy circuit, or the like is disclosed. An oxide layer insulates a polysilicon electrode from a doped substrate region. A potential is applied between the electrode and the doped region of sufficient magnitude to cause the oxide to rupture and to cause permanent filaments to be formed within the oxide. The filaments provide permanent conductive links between the polysilicon electrode and the doped substrate region.

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patent: 3717852 (1973-02-01), Abbas et al.
patent: 3781977 (1974-01-01), Hulmes
patent: 3787822 (1974-01-01), Rioult
patent: 4072976 (1978-02-01), Harari
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4375086 (1983-02-01), Van Velthoven

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