Fused nanocrystal thin film semiconductor and method

Details Fused nanocrystal thin film semiconductor and method Fused nanocrystal thin film semiconductor and method

2006-10-10

2009-11-24

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

C977S892000

Reexamination Certificate

active

07622371

ABSTRACT:
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

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