Fuse-type memory cells based on irreversible snapback device

Details Fuse-type memory cells based on irreversible snapback device Fuse-type memory cells based on irreversible snapback device

2011-03-22

2011-03-22

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S096000, C365S103000, C365S104000, C327S525000

Reexamination Certificate

active

07911869

ABSTRACT:
In a programmable circuit making use of fuse cells, a snapback NMOS or NPN transistor or SCR without reversible snapback capability is used as an anti-fuse, and programming comprises biasing the control electrode of the transistor to cause the transistor to go into snapback mode.

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