Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-30
2009-08-25
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S132000, C257S529000, C257SE21592, C257SE23147
Reexamination Certificate
active
07579266
ABSTRACT:
When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient due to the insufficient intensity of a laser or disconnection of even an adjacent fuse due to excessive laser irradiation might occur. Further, a problem also occurred that after disconnection of the fuse, moisture entered from exterior through the region in which the fuse has been disconnected, so that the quality of a film underlying the fuse was adversely affected. After a SiON film, a SiN film, and a SiO2film have been formed to cover the fuse in this stated order, etching is performed to the SiN film, which is an etching stopper film. The SiON film having a uniform and desired film thickness is thereby formed on the fuse.
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K. Arndt et al., Reliability of Laser Activated Metal Fuses in DRAMS, 1999 IEEE/CPMT Int'l Electronics Manufacturing Technology Symposium, p. 389-394.
Hoang Quoc D
NEC Electronics Corporation
Young & Thompson
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