Fuse repair circuit for semiconductor memory circuit

Details Fuse repair circuit for semiconductor memory circuit Fuse repair circuit for semiconductor memory circuit

1999-02-10

2000-08-29

Nguyen, Tan T.

Static information storage and retrieval

Read/write circuit

Bad bit

3652257, G11C 700

Patent

active

061117986

ABSTRACT:
A fuse repair circuit for a semiconductor memory device includes a cell array provided with a row redundancy and a column redundancy and a fuse block for driving the row redundancy during a RAS cycle and driving the column redundancy during a CAS cycle, wherein the fuse block consists of an address input unit for selectively outputting a row address or a column address in accordance with switching signals, a plurality of fuse units, wherein redundancy information of a defective cell is programmed, for comparing an inputted address with the programmed redundancy information, and a redundancy driving unit for outputting a matching signal for driving the row redundancy or the column redundancy when the inputted address and the programmed redundancy information are identical.

REFERENCES:
patent: 5383156 (1995-01-01), Komatsu
patent: 5559741 (1996-09-01), Sobue
patent: 5652725 (1997-07-01), Suma et al.
patent: 5771195 (1998-06-01), McClure
patent: 5781486 (1998-07-01), Merrit
patent: 5808948 (1998-08-01), Kim et al.

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