Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-04-19
2009-02-17
Smith, Zandra V. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257SE23150, C438S132000, C438S333000, C438S601000, C438S600000
Reexamination Certificate
active
07492032
ABSTRACT:
A device and method of manufacturing a fuse region are disclosed. The fuse region may include an interlayer insulating layer formed on a substrate, a plurality of fuses disposed on the interlayer insulating layer, and fuse isolation walls located between the fuses, wherein each of the fuse isolation walls may include lower and upper fuse isolation patterns.
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German Office Action (dated Dec. 14, 2007) for counterpart German Patent Application 10 2005 019 702.7-33 is provided for the purposes of certification under 37 C.F.R. §§ 1.97(e).
Bang Jeong-Ho
Bang Kwang-Kyu
Choi Ho-Jeong
Choi Seung-Gyoo
Lee Kun-Gu
Crawford Latanya
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Smith Zandra V.
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