Fuse redundancy circuitry for a semiconductor memory device

Details Fuse redundancy circuitry for a semiconductor memory device Fuse redundancy circuitry for a semiconductor memory device

1995-12-06

1997-04-08

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Having fuse element

365226, 36523008, 365200, G11C 700

Patent

active

056194692

ABSTRACT:
A programming section of a semiconductor memory device includes an external power source detecting circuit adapted for detecting an initial power supply and for generating a power-up signal, a gate control section for receiving the power-up signal from the external power source detecting circuit and for generating a first signal and a second signal, a programmable ROM cell for receiving the first and second signals from the gate control section and for generating an output, and a latch section for latching the output of the programmable ROM cell.

REFERENCES:
patent: 4571707 (1986-02-01), Watanabe
patent: 5300840 (1994-04-01), Drouot

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