Fuse in a semiconductor device and method for fabricating...

Details Fuse in a semiconductor device and method for fabricating... Fuse in a semiconductor device and method for fabricating...

2011-01-04

2011-01-04

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21592

Reexamination Certificate

active

07863177

ABSTRACT:
The present invention relates to a fuse in a semiconductor device and method for fabricating the same. An oxide film is formed on sidewalls of a barrier metal layer in a bottom portion of a fuse pattern, thereby preventing the barrier metal layer from being exposed. As a result, the oxidation of the barrier metal layer is inhibited to improve characteristics of the device.

REFERENCES:
patent: 6756655 (2004-06-01), Le et al.
patent: 2002/0027291 (2002-03-01), Yokoyama
patent: 2007/0013025 (2007-01-01), Mun
patent: 2008-198939 (2008-08-01), None

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