Fuse box of semiconductor device and fabrication method thereof

Details Fuse box of semiconductor device and fabrication method thereof Fuse box of semiconductor device and fabrication method thereof

2008-07-22

2008-07-22

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S215000, C438S281000, C438S601000

Reexamination Certificate

active

07402464

ABSTRACT:
A fuse box includes a semiconductor substrate having a fuse region, and a lower line in the fuse region that has a first region and a second region. An upper line is placed on the upper part of the lower line to overlap the first region. A fuse is placed on the upper part of the upper line, and connects electrically to the second region of the lower line and the upper surface of the upper line. A lower interlayer insulating layer is interposed between the lower line and the upper line, and an upper interlayer insulating layer is interposed between the upper line and the fuse. The fuse is formed on the upper interlayer insulating layer. Both ends of the fuse connect electrically to the second region of the lower line and the upper line, respectively, through fuse holes penetrating the lower and upper interlayer insulating layers.

REFERENCES:
patent: 5389814 (1995-02-01), Srikrishnan et al.
patent: 6444544 (2002-09-01), Hu et al.
patent: 6518158 (2003-02-01), Yamashita et al.
patent: 2002/0014680 (2002-02-01), Tottori
patent: 2002-43432 (2002-02-01), None
patent: 2002-043432 (2002-02-01), None
patent: 2002-184777 (2002-06-01), None
patent: 2001-0003523 (2001-01-01), None
patent: 2001-0065341 (2001-07-01), None

Affiliated with

Also associated with

Rating

Fuse box of semiconductor device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fuse box of semiconductor device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fuse box of semiconductor device and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2788454