Fuse box of semiconductor device

Details Fuse box of semiconductor device Fuse box of semiconductor device

2005-12-30

2008-10-28

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S201000

Reexamination Certificate

active

07443755

ABSTRACT:
A fuse box of a semiconductor device is provided. More specifically, provided is a device of forming a uniformly residual oxide film by rearranging fuse boxes in consideration of an etching ratio depending on plasma density of the semiconductor device to prevent a fuse attack. During a repair etching process to open a fuse box in a chip, an etching loading effect is evenly reflected depending on pattern density of the fuse box so that the residual oxide film is regularly distributed in each fuse of all fuse boxes regardless of the size of an open region. As a result, the fuse attack resulting from an excessive etching process on the oxide film on a small fuse is prevented in fuse blowing to improve yield of FTA (Fixed To Attempt) yield.

REFERENCES:
patent: 6353570 (2002-03-01), Hwang et al.
patent: 6724679 (2004-04-01), Nagasawa et al.
patent: 6930933 (2005-08-01), Jeon
patent: 6982471 (2006-01-01), Lee et al.
patent: 1020040006386 (2004-01-01), None

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