Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2006-07-24
2008-12-30
Purvis, Sue A. (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S049000, C257SE29043, C438S096000, C438S097000, C438S478000, C438S492000
Reexamination Certificate
active
07470929
ABSTRACT:
Techniques are provided for fuse/anti-fuse structures, including an inner conductor structure, an insulating layer spaced outwardly of the inner conductor structure, an outer conductor structure disposed outwardly of the insulating layer, and a cavity-defining structure that defines a cavity, with at least a portion of the cavity-defining structure being formed from at least one of the inner conductor structure, the insulating layer, and the outer conductor structure. Methods of making and programming the fuse/anti-fuse structures are also provided.
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Hsu Louis C.
Joshi Rajiv V.
Mandelman Jack Allan
Yang Chih-Chao
International Business Machines - Corporation
Purvis Sue A.
Ryan & Mason & Lewis, LLP
Valentine Jami M
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